1 1 M54563FP 8-unit 500ma darlington transistor array with clamp diode source type 2012.may description M54563FP is an eight-circuit output-sourcing darlington transistor array. the circuits are made of pnp and npn transistors. this semiconductor integrated circuit performs high current driving with extremely low input-current supply. features high breakdown voltage (bvceo > 50v) high-current driving (io(max) = ?500ma) with clamping diodes driving available with pmos ic output of 6 ~ 16v or with ttl output output current-sourcing type applications drives of relays, printers, leds, fluorescent display tubes and lamps, and interfaces between mos-bipolar logic systems and relays, solenoids, or small motors. function the M54563FP each have eight circuits, which are made of input inverters and current-sourcing outputs. the outputs are made of pnp transistors and npn darlington transistors. the pnp transistor base current is constant. a clamping diode is provided between each output and gnd. vs and gnd are used commonly among the eight circuits. the inputs have resistance of 3k , and voltage of up to 10v is applicable. output current is 500 ma maximum. supply voltage vs is 50v maximum. ma ? 500 current per circuit output, h output current i o ?55 +125 storage temperature t stg ?20 +75 operating temperature t opr w 1.10 ta = 25 , when mounted on board power dissipation p d v 50 clamping diode reverse voltage v r ma ? 500 clamping diode forward current i f v ?0.5 +10 input voltage v i v 50 supply voltage v s v ?0.5 +50 output , l collector-emitter voltage v ceo unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 c) circuit diagram the eight circuits share the vs and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : v s output input 3k 20k 3k gnd 1.5k 7.2k # : unused input pins must be connected to gnd. pin configuration package type 20p2n-a 3 4 5 6 7 8 9 10 18 17 16 15 14 13 12 11 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 vs gnd output input 2 19 o1 in1 1 20 nc nc nc : no connection # #
8-unit 500ma darlington transistor array with clamp diode source type M54563FP 2 2012.may * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these values are obtained under any conditions. # : unused input pins must be connected to gnd. duty cycle no more than 5% v 0.2 0 ?l? input voltage v il v 10 2.4 ?h? input voltage v ih ?100 0 duty cycle no more than 30% ma ?350 0 output current (current per 1 circuit when 8 circuits are coming on simultaneously) i o v 50 0 supply voltage v s max typ min unit limits parameter symbol recommended operating (unless otherwise noted, ta = ?20 ~ +75 ) switching characteristics (unless otherwise noted, ta = 25 ? 4800 ? turn-off time t off ? 100 ? c l = 15pf note 1 turn-on time t on max typ min unit limits test conditions parameter symbol # # note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l r l pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10ms, tr = 6ns, tf = 6ns, z o = 50 ,v i = 0 to 2.4v (2) input-output conditions : r l = 30 , v s = 10v (3) electrostatic capacity cl includes floating capacitance at connections and input capacitance at probes v s v s = 10v, v i = 2.4v, i o = -100ma min unit v -2.4 -1.35 i f = -350ma clamping ? diode ? forward ? voltage v f 5.0 3.0 v i = 25v a 100 v r = 50v clamping ? diode ? reverse ? current i r ma 15.0 5.6 v s = 50v, v i = 3v (all input) supply current i s ma 1.0 0.6 v i = 5v input current i i 2.0 1.45 v 2.4 1.6 v s = 10v, v i = 2.4v, i o = -350ma collector-emitter saturation voltage v ce(sat) a 100 v s = 50v, v i = 0.2v supply ? leak ? current i s(leak) max typ * limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75
8-unit 500ma darlington transistor array with clamp diode source type M54563FP 3 2012.may 0 0.5 1.0 1.5 2.0 0 2.5 ta=25 ta=-20 ta=75 -100 -200 -300 -400 v s =10v v i =2.4v clamping diode characteristics forward bias voltage v f (v) forward bias current i f (ma) output current i o (ma) grounded emitter transfer characteristics input voltage v i (v) duty cycle (%) output current i o (ma) duty-cycle-output current characteristics duty cycle (%) output current i o (ma) duty-cycle-output current characteristics output saturation voltage collector current characteristics collector satura tion voltage v ce(sat) (v) output current i o (ma) thermal derating factor characteristics ambient temperature ta( ) power dissipation pd (w) 0 0.5 1.0 1.5 2.0 0 100 200 300 400 ta=25 ta=-20 ta=75 0 0.2 0.4 0.6 0.8 0 1.0 ta=25 ta=-20 ta=75 -100 -200 -300 -400 v s =20v v s -v o =4v typical characteristics 0 25 50 75 100 0 0.5 1.0 1.5 0 20 60 80 100 0 -100 -200 -300 40 -400 0 20 60 80 100 40 0 -100 -200 -300 -400 ?the collector current values represent the current per circuit. ?repeated frequency 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 25 ?the collector current values represent the current per circuit. ?repeated frequency 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 75 -500 2.0 -500 -500 500 -500
8-unit 500ma darlington transistor array with clamp diode source type M54563FP 4 2012.may 024 810 6 ta=25 ta=75 ta=-20 v s =20v 012 45 0 0.2 0.6 0.8 3 0.4 ta=25 ta=75 ta=-20 v s =20v input characteristics input voltage v i (v) input current i i (ma) input characteristics input voltage v i (v) input current i i (ma) 1.0 0 1 3 4 5 2
8-unit 500ma darlington transistor array with clamp diode source type M54563FP 5 2012.may package outline
8-unit 500ma darlington transistor array with clamp diode source type M54563FP 6 2012.may ? 2012 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub le may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belong ing to mitsubishi electric corporation or a third party. ?mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ?all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor ho me page (http://www.mitsub ishielectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsib ility for any damage, liability or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mi tsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporati on or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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